Uniform-carrier-concentration p-type layers in GaAs produced by beryllium ion implantation
Multiple-energy Be/sup +/ ion implantation has been used to create uniform-carrier-concentration p-type layers (approximately-greater-than1.5 ..mu..m thick) in GaAs. The implanted samples were annealed at 900/sup 0/C using pyrolytic Si/sub 3/N/sub 4/ as an encapsulant. High activation of the implanted Be was observed. On samples with implanted hole concentrations of 2 x 10/sup 18//cm/sup 3/, the measured carrier concentration as a function of depth is in good agreement with that expected from LSS range theory. For higher doses, diffusion of the implanted Be was observed. p/sup +/n/sup -/n/sup +/ junctions formed by implantation into undoped epitaxial material have low leakage currents and sharp breakdowns at average electric fields in the n/sup -/ region of 1.5 x 10/sup 5/ V/cm. (AIP)
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 7290289
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 28:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
BERYLLIUM IONS
BREAKDOWN
CARRIER DENSITY
CHARGED PARTICLES
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
JUNCTION DIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPATIAL DOSE DISTRIBUTIONS