High-efficiency ion-implanted lo-hi-lo GaAs IMPATT diodes
A dc-to-rf conversion efficiency of 37% combined with an output power of 3.4 W at 3.3 GHz has been obtained from a Schottky-barrier GaAs IMPATT diode having a lo-hi-lo profile. The donor spike or clump was produced by implanting silicon into an epitaxial layer with a n-type concentration of 1.65 x 10/sup 15/ cm/sup -3/. Pyrolytic Si/sub 3/N/sub 4/ was used to encapsulate the GaAs during the postimplantation anneal. For these devices, the Si/sub 3/N/sub 4/ deposition procedure was found to be critical and had to be optimizied to achieve reproducible results. The devices have had very uniform electrical characteristics, and a large yield of devices with greater than 30% efficiency has been obtained. These results indicate that implantation can be used to produce lo-hi-lo IMPATT's with significantly higher device yields than have been obtained by epitaxial techniques. (AIP)
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 7188016
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:2; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CHARGED PARTICLES
CONVERSION
DEPOSITION
EFFICIENCY
ENERGY CONVERSION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
IONS
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
SILICON IONS
SILICON NITRIDES