Electrical profiling and optical activation studies of Be-implanted GaAs
Differential resistivity and Hall-effect measurements have been utilized to study the annealing behavior and electrical carrier-distribution profiles of Be-implanted GaAs. A maximum of 90--100% electrical activation occurs during 900/sup 0/C anneals for implanted Be concentrations less than approx.5 x 10/sup 18/ cm/sup -3/. For higher fluences, however, a heavily concentration-dependent diffusion is observed, and the measured electrical activation is complicated by outdiffusion of Be into the Si/sub 3/N/sub 4/ encapsulant. In these cases, a maximum in the electrical activation appears for annealing near 700/sup 0/C. Low-temperature (5/sup 0/K) photoluminescence substantiates previous findings that 900/sup 0/C annealing results in maximum optical activation and lattice recovery.
- Research Organization:
- Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 7098696
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
BERYLLIUM IONS
CHARGED PARTICLES
DIFFUSION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
ION IMPLANTATION
IONS
LUMINESCENCE
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
ULTRALOW TEMPERATURE