Dual implantation of C and Ga ions into GaAs
Dual implants of C/sup +/ and Ga/sup +/ ions in GaAs have been investigated by sheet-resistivity and Hall-effect measurements. Efficient doping has been achieved by dual implantation, even at an annealing temperature of 700 /sup 0/C. Analysis of electrical profiles indicates that the concentration of substitutional atoms in As sites is less than the implanted dose; the remaining C atoms are believed to out-diffuse through encapsulation during annealing. Although the doping efficiency for the dual implants is higher than that of the single implants, the effective compensation ratio is about the same, which suggests that ''self-compensation'' may be the predominant mechanism in the implanted samples.
- Research Organization:
- Systems Research Laboratories, Inc., 2800 Indian Ripple Road, Dayton, Ohio 45440
- OSTI ID:
- 7095913
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:5; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CARBON IONS
CHARGED PARTICLES
CRYSTAL DOPING
DEPTH DOSE DISTRIBUTIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM IONS
HEAT TREATMENTS
ION IMPLANTATION
IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
SPATIAL DOSE DISTRIBUTIONS