Photoluminescence study of silicon- and oxygen-implanted gallium arsenides. Master's thesis
The low-temperature photoluminescence properties of Si-, O- or (Si + O) - implanted GaAs were analyzed. Liquid Encapsulated Czochralski (LEC) grown GaAS was implanted with 100-keV silicon ions at a dose of 6 x 10/sup 12//sq cm and/or 65 keV oxygen ions at a dose of 1.5 x 10/sup 12/ or 3 x 10/sup 12/ /sq cm. The oxygen ion energy was chosen so that its projected range coincided with that of the silicon ion. The Si-implanted layers were annealed at 850 C for 15 minutes. The O- and (Si+O)-implanted samples were annealed at 400 C for two hours or 900 C for 15 minutes. Electrical measurements indicated tha GaAs:Si+O layers annealed at 400 C had resistivities four orders of magnitude larger than the Si-implanted layers. In contrast, the resistivity of the GaAs:Si+O layers had increased by only a factor of one and a half when annealed at 900 C. By comparing spectral features of the differently prepared samples as a function of sample temperature as well as depth within the sample, it was found that there was some correlation between the electrical and optical properties of these layers. The free-to-bound transition (e,SiAs) in the GaAs:Si layers was quenched in the 400 C annealed GaAs:Si+O layers, which in turn exhibited relatively high resistivity. However, this particular transition was found in the relatively low-resistivity GaAs:Si+O layers annealed at 900 C.
- Research Organization:
- Air Force Inst. of Tech., Wright-Patterson AFB, OH (USA). School of Engineering
- OSTI ID:
- 5534053
- Report Number(s):
- AD-A-167070/2/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ENCAPSULATION
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
LOW TEMPERATURE
LUMINESCENCE
OPTICAL PROPERTIES
OXYGEN IONS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SILICON IONS