Nitrogen implantation in GaAs/sub 1-x/P/sub x/. II. Annealing properties

Journal Article · Wed Jun 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324009· OSTI ID:7293194

Anderson, R E; Wolford, D J; Streetman, B G

Efficient photoluminescence has been obtained from GaAs/sub 1-x/P/sub x/ implanted with N at room temperature. With appropriate annealing, emission intensities comparable with conventionally doped material are realized for N-implanted GaAs/sub 1-x/P/sub x/ crystals of both direct- and indirect-band-gap compositions. Anneal temperatures of at least 950 degreeC with dielectric encapsulation are necessary to incorporate the implanted N on optically active sites, although much of the implantation-induced lattice disorder is removed by annealing to 700 degreeC. Anneal characteristics are investigated by both isochronal and isothermal anneals, and comparison is made between room-temperature and hot implantations. Effects of damage introduced by optically inactive implanted Ne are compared to results for implanted N. The effects of annealing in the presence of arsenic and gallium vapor are studied, and depth profiles of lattice damage and optically active N are obtained.

• Research Organization: Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 7293194
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHARGED PARTICLES
COATINGS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPTH DOSE DISTRIBUTIONS
EFFICIENCY
EMISSION SPECTRA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
ION IMPLANTATION
IONS
LUMINESCENCE
NEON IONS
NITROGEN IONS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTECTIVE COATINGS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
SILICON COMPOUNDS
SILICON OXIDES
SPATIAL DOSE DISTRIBUTIONS
SPECTRA
TRAPS