Nitrogen implantation in GaAs/sub 1-x/P/sub x/. I. Photoluminescence properties

Journal Article · Wed Jun 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324008· OSTI ID:7313770

Wolford, D J; Anderson, R E; Streetman, B G

Room-temperature implantation of nitrogen in GaAs/sub 1-x/P/sub x/, following appropriate annealing, has resulted in efficient photoluminescence (PL) involving the N isoelectronic trap. Emission intensities obtained from direct-band-gap materials are comparable to, or greater than, those of unimplanted samples. Similarly, nitrogen-implanted indirect-gap materials give PL intensities which compare with or exceed that of vapor-phase-epitaxial material N doped during growth. Isochronal annealing indicates that most implantation-induced lattice disorder is removed at temperatures below 800 degreeC; however, promotion of implanted N atoms onto active lattice sites requires temperatures near 950 degreeC. Both levels of the nitrogen trap, N/sub Gamma/ (or N/sub Gamma hyphen X/) and N/sub X/, are studied by PL over a four order-of-magnitude range in implanted nitrogen fluence. Comparison is made between spectra obtained at 77 and 4.2 degreeK. Studies suggest association of both N-trap levels with the isolated N center. Apparent increased exciton binding at the N/sub X/ level for moderate N concentrations and origins of PL degradation at high implant fluences are discussed.

• Research Organization: Coordinated Science Labortory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 7313770
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
EFFICIENCY
EMISSION SPECTRA
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
ION IMPLANTATION
IONS
LUMINESCENCE
NITROGEN IONS
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUASI PARTICLES
RADIATION EFFECTS
SPECTRA
TRAPS