Ion implanted eutectic gallium arsenide solar cell
Technical Report
·
OSTI ID:7209887
An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a eutectic gallium arsenide cell body to obtain a drift electrical field, with multiple ion implants progressively larger in dose and progressively lower in implant energies to provide a P-type ion implanted top layer having a common connection to all P regions of the cell body and an N-type ion implanted bottom layer having a common connection to all N regions of the cell body. The implanted regions of the cell are pulsed electron beam annealed at room temperature.
- Research Organization:
- Department of the Air Force, Washington, DC (USA)
- OSTI ID:
- 7209887
- Report Number(s):
- AD-D-003502
- Country of Publication:
- United States
- Language:
- English
Similar Records
Aluminum arsenide eutectic gallium arsenide solar cell
Aluminum arsenide eutectic gallium arsenide solar cell
Gallium arsenide phosphide top solar cell
Technical Report
·
Wed Dec 08 04:00:00 UTC 1976
·
OSTI ID:7105769
Aluminum arsenide eutectic gallium arsenide solar cell
Patent
·
Tue Jan 24 04:00:00 UTC 1978
·
OSTI ID:6882336
Gallium arsenide phosphide top solar cell
Patent
·
Tue Apr 15 04:00:00 UTC 1986
·
OSTI ID:5555029