Aluminum arsenide eutectic gallium arsenide solar cell
Patent
·
OSTI ID:6882336
An improved gallium arsenide solar cell is provided by forming a P + layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al/sub x/AsGa/sub l-x/ on the surface of the vertical PN junction substrate. The deposited GaAs layer with P dopant and the Al/sub x/AsGa/sub l-x/ layer forms horizontal P-N junctions with the N-type vertical regions. An N + region is formed on the solar cell backside by ion implantation of an N dopant followed by a pulse electron beam current of the implanted region.
- Assignee:
- Secretary of the Air Force
- Patent Number(s):
- US 4070205
- OSTI ID:
- 6882336
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
DESIGN
DIRECT ENERGY CONVERTERS
EPITAXY
EUTECTICS
GALLIUM ARSENIDE SOLAR CELLS
ION IMPLANTATION
JUNCTIONS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
DESIGN
DIRECT ENERGY CONVERTERS
EPITAXY
EUTECTICS
GALLIUM ARSENIDE SOLAR CELLS
ION IMPLANTATION
JUNCTIONS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS