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Fabrication of GaAs-GaAlAs solar cells

Patent ·
OSTI ID:6552460
;
The specification describes an improved iii-v compound solar cell structure and fabrication process wherein a p-type layer of gallium aluminum arsenide is epitaxially grown on an n type gallium arsenide substrate to form a p-type region and a pn junction in the substrate. Controlled amounts of beryllium are introduced into both the epitaxial layer and the substrate, either during epitaxial growth or by using beryllium ion implantation techniques subsequent to the p-type epitaxial growth step. The homojunction-heterostructure device thus formed exhibits improved power conversion efficiencies in excess of 17%.
Assignee:
Hughes Aircraft Co
Patent Number(s):
US 4235651
OSTI ID:
6552460
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALINE EARTH METALS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
JUNCTIONS
METALS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT