The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation

Journal Article · Tue Mar 01 04:00:00 EST 2005 · Semiconductors

DOI:https://doi.org/10.1134/1.1882789· OSTI ID:20658153

Ardyshev, M V; Ardyshev, V M ^[1]; Kryuchkov, Yu Yu ^[2]

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1. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, Tomsk, 634050 (Russian Federation)
2. Tomsk Polytechnical University, Tomsk, 634050 (Russian Federation)

Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed ({tau}{sub p} = 1.3 x 10{sup -2} s and an off-duty factor of 100) and continuous irradiation with {sup 32}S, {sup 12}C, and {sup 4}He ions at room temperature at the ion energies E = 100-150 keV, doses {phi} = 1 x 10{sup 9}-6 x 10{sup 16} cm{sup -2}, and current densities j = 1 x 10{sup -9}-3 x 10{sup -6} A cm{sup -2}. It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

• OSTI ID: 20658153
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 39; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
CARBON 12
CHRONIC IRRADIATION
CRYSTAL DEFECTS
CURRENT DENSITY
DEFECTS
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
HELIUM 4
ION BEAMS
ION IMPLANTATION
KEV RANGE 100-1000
RADIATION DOSES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K