Damage accumulation in neon implanted silicon

Journal Article · Tue Aug 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2220644· OSTI ID:20880010

Oliviero, E; Peripolli, S; Amaral, L; Fichtner, P F. P.; Beaufort, M F; Barbot, J F; Donnelly, S E ^[1]

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1. Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, Caixa Postal 15051, 91501-970 Porto Alegre, Rio Grande do Sul (Brazil)

Damage accumulation in neon-implanted silicon with fluences ranging from 5x10{sup 14} to 5x10{sup 16} Ne cm{sup -2} has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250 deg.C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250 deg.C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as (311) defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

• OSTI ID: 20880010
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
BUBBLES
CHANNELING
DENSITY
DIFFUSION
HELIUM
INTERSTITIALS
ION IMPLANTATION
IONS
LAYERS
NEON
POLYCRYSTALS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY