Effects of hydrogen implantation temperature on InP surface blistering

Journal Article · Mon May 19 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2926682· OSTI ID:21102024

Peng, Chen; Lau, S S ^[1]; Di, Zengfeng; Nastasi, M ^[2]; Bruno, Elena; Grimaldi, Maria Grazia ^[3]; Theodore, N David ^[4]

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1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
3. MATIS-CNR-INFM and Dipartimento di Fisica ed Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy)
4. Analog and Mixed-Signal Technologies, Freescale Semiconductor Inc., Tempe, Arizona 85284 (United States)

We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation.

• OSTI ID: 21102024
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPRESSION STRENGTH
CRYSTAL GROWTH
HYDROGEN
HYDROGEN IONS
INDIUM PHOSPHIDES
ION IMPLANTATION
LAYERS
NUCLEATION
POINT DEFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION