Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy

Journal Article · Fri Dec 15 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2401030· OSTI ID:20884950

Duengen, W; Job, R; Mueller, T; Ma, Y; Fahrner, W R; Keller, L O; Horstmann, J T; Fiedler, H ^[1]

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1. Chair of Electronic Devices, University of Hagen, Haldener Strasse 182, P.O. Box 940, D-58084 Hagen (Germany)

Czochralski silicon wafers were implanted with H{sup +} ions at a dose of 1x10{sup 16} cm{sup -2} followed by hydrogen plasma treatments at different temperatures. The minimum hydrogen implantation dose required for silicon surface exfoliation of 3x10{sup 16} H{sup +}/cm{sup 2} without further hydrogen incorporation was reduced to one-third by subsequent plasma hydrogenation. The corresponding local vibrational modes of hydrogen molecules, vacancy-hydrogen complexes, and Si-H bonds on surfaces have been analyzed by micro-Raman scattering spectroscopy to investigate blistering and platelet formation. The surface profile has been studied by atomic force microscopy and scanning electron microscopy. The plasma treated samples were annealed to investigate the mechanism and applicability of the induced exfoliation. <111>-platelet formation occurred below plasma hydrogenation temperatures of 350 deg. C. At temperatures above 450 deg. C, <100>-platelet nucleation induced blistering.

• OSTI ID: 20884950
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATOMIC FORCE MICROSCOPY
CHEMICAL BONDS
CRYSTALS
HYDROGEN
HYDROGEN COMPLEXES
HYDROGEN IONS 1 PLUS
HYDROGENATION
ION IMPLANTATION
NUCLEATION
PLASMA
RAMAN EFFECT
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
VACANCIES