Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon

Journal Article · Mon Dec 20 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125500· OSTI ID:20217755

Hoechbauer, T ^[1]; Nastasi, M ^[1]; Mayer, J W ^[2]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Arizona State University, Tempe, Arizona 85287-1704 (United States)

We have studied the depths of hydrogen surface blisters in <100> n-type silicon, which formed after B+H coimplantation and heat treatment. The silicon substrates had three different dopant levels, ranging from 10{sup 14} to 10{sup 19} cm{sup -3}. The Si substrates were first implanted with B{sup +} ions at 147 keV to a dose of 10{sup 15} cm{sup -2}. Some of the B-implanted samples were left in their as-implanted state; others were electrically activated by a rapid thermal anneal. The samples were then implanted with 40 keV H{sup +} to a dose of 5x10{sup 16} cm{sup -2}. At the chosen implantation energies, the hydrogen- and boron-implantation distributions overlap. Following H{sup +} implantation, all the samples were vacuum annealed and examined by ion-beam analysis and scanning electron microscopy. In all cases, the blister depth was consistently found to be strongly correlated with the H damage profile rather than the H or B concentration profiles. (c) 1999 American Institute of Physics.

• OSTI ID: 20217755
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 75; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON IONS
DEPTH
DOPED MATERIALS
ELECTRON MICROSCOPY
EXPERIMENTAL DATA
HYDROGEN IONS
ION IMPLANTATION
KEV RANGE 10-100
MASS SPECTRA
SILICON