Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon

Journal Article · Fri Oct 22 00:00:00 EDT 2004 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.1794571· OSTI ID:20658016

Moutanabbir, O; Terreault, B ^[1]

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1. Institut National de la Recherche Scientifique-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

In this work, we investigate the origin of a giant isotope effect discovered in the blistering of hydrogen-ion-implanted and annealed silicon. Si(001) samples were implanted or coimplanted with 5 keV of H and/or D ions to total fluences of 2x10{sup 16} and 6x10{sup 16} ion/cm{sup 2}. The lower fluence is sufficient for blistering by pure H, but the higher one is required for the maximum blister coverage whenever D is involved. On these samples, we carried out Raman-scattering investigations of the evolution of Si-H/D complexes upon a stepwise thermal annealing from 200 to 550 deg. C. We have identified the critical chemical transformations characterizing the hydrogen-deuterium-induced blistering of silicon. The puzzling dependence on ion mass appears to be mainly connected with the nature of the radiation damage. We have found that H is more efficient in 'preparing the ground' for blistering by nucleating platelets parallel to the surface, essentially due to its ability to agglomerate in the multihydride monovacancy complexes that evolve into hydrogenated extended internal surfaces. By contrast, D is preferentially trapped in the surprisingly stable monodeuteride multivacancies.

• OSTI ID: 20658016
• Journal Information: Journal of Chemical Physics, Vol. 121, Issue 16; Other Information: DOI: 10.1063/1.1794571; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
ANNEALING
DEUTERIUM
HYDROGEN
HYDROGEN IONS
ION BEAMS
ION IMPLANTATION
ISOTOPE EFFECTS
KEV RANGE 01-10
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON
SILICON COMPLEXES
SILICON IONS
SURFACE TREATMENTS
SURFACES
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
VACANCIES