Role of strain in the blistering of hydrogen-implanted silicon

Journal Article · Mon Sep 04 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2345245· OSTI ID:20883211

Lee, Jung-Kun; Yuan, Lin; Jia, Q X; Hoechbauer, Tobias; Jung, Hyun Suk; Lin, Shao; Misra, Amit; Nastasi, Michael ^[1]

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1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

The authors investigated the physical mechanisms underlying blistering in hydrogen-implanted silicon by examining the correlation between implantation induced damage, strain distribution, and vacancy diffusion. Using Rutherford backscattering, scanning electron microscopy, and atomic force microscopy, they found that the depth of blisters coincided with that of maximum implantation damage. A model based on experimental results is presented showing the effect of tensile strain on the local diffusion of vacancies toward the depth of maximum damage, which promotes the nucleation and growth of platelets and ultimately blisters.

• OSTI ID: 20883211
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
BLISTERS
CRYSTAL GROWTH
CRYSTALS
HYDROGEN
HYDROGEN IONS
ION IMPLANTATION
NUCLEATION
RESIDUAL STRESSES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
VACANCIES