Segregation and formation of MnP particles during rapid thermal annealing of Mn-implanted InP and GaP
Journal Article
·
· Journal of Applied Physics
- Departement de Physique and Regroupement Quebecois sur les Materiaux de Pointe, Universite de Montreal, CP 6128, Succursale Centre-Ville, Montreal, Quebec H3C 3J7 (Canada)
We have studied the structural and magnetic properties of Mn implanted (1-5x10{sup 16} cm{sup -2}, 200 keV) into InP and GaP substrates, before and after rapid thermal annealing. As revealed by Rutherford backscattering spectrometry, secondary ion mass spectrometry, and transmission electron microscopy measurements, implantation results in an amorphous surface layer 300 nm deep, and subsequent annealing gives rise to epitaxial recrystallization of this layer accompanied by a segregation of most of the Mn into clusters about 60 nm in diameter at the surface. Magnetic measurements indicate ferromagnetic behavior only for the annealed samples with T{sub C} close to 290 K, characteristic of bulk MnP, whose presence is confirmed by diffraction data. In addition, there is no evident dependence of the magnetic and structural properties on the doping type or level of the substrates.
- OSTI ID:
- 21359295
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dose and doping dependence of damage annealing in Fe MeV implanted InP
Rapid thermal annealing of ion-implanted semiconductors
Amorphization of thin Si layers by arsenic ion implantation
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:477445
Rapid thermal annealing of ion-implanted semiconductors
Journal Article
·
Wed Nov 14 23:00:00 EST 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:6314774
Amorphization of thin Si layers by arsenic ion implantation
Journal Article
·
Thu Feb 29 23:00:00 EST 1996
· Journal of the Electrochemical Society
·
OSTI ID:220854
Related Subjects
36 MATERIALS SCIENCE
ANNEALING
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRON MICROSCOPY
ENERGY RANGE
EPITAXY
FERROMAGNETIC MATERIALS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MANGANESE COMPOUNDS
MANGANESE PHOSPHIDES
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
MICROSCOPY
PARTICLES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RECRYSTALLIZATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCATTERING
SEGREGATION
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
ANNEALING
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRON MICROSCOPY
ENERGY RANGE
EPITAXY
FERROMAGNETIC MATERIALS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MANGANESE COMPOUNDS
MANGANESE PHOSPHIDES
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
MICROSCOPY
PARTICLES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RECRYSTALLIZATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCATTERING
SEGREGATION
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY