Amorphization of thin Si layers by arsenic ion implantation

Journal Article · Fri Mar 01 04:00:00 EST 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836535· OSTI ID:220854

Sakiyama, Keizo; Naka, Toshio; Kaneko, Seiji ^[1]; Onda, Takayuki; Hara, Tohru ^[2]

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1. Sharp Corp., Tenri, Nara (Japan)
2. Hosei Univ., Koganei, Tokyo (Japan). Dept. of Electrical Engineering

Annealing of an amorphized Si layer formed by As{sup +} implantation into an SOI (silicon-on-insulator) Si layer was performed. Arsenic ions are implanted at 100 keV and 5.0 {times} 10{sup 15} ions/cm{sup 2} into thin (56 nm thick) and thick (1.5 {micro}m thick) Si layers. Rutherford backscattering spectrometry and transmission electron microscope measurements show the formation of a 130 nm thick amorphous layer by this implantation. In the thick Si layer, recrystallization occurred at the amorphous/crystalline interface with an annealing at 850 C. However, no recrystallization occurred within the thin Si layer because a crystalline interface did not exist. Thus, a high resistivity, amorphous n-Si layer with low electron mobility was formed.

• Sponsoring Organization: USDOE
• OSTI ID: 220854
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 3 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ARSENIC IONS
ELECTRIC CONDUCTIVITY
FABRICATION
INTEGRATED CIRCUITS
ION IMPLANTATION
PHASE TRANSFORMATIONS
RUTHERFORD SCATTERING
SILICON
TRANSMISSION ELECTRON MICROSCOPY