Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation
- Department of mathematics and physics, Kanagawa University, 2946, Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)
We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscope (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.
- OSTI ID:
- 22611569
- Journal Information:
- AIP Advances, Vol. 6, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHANNELING
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE 01-10
LAYERS
MASS
MASS SPECTROSCOPY
MONOCRYSTALS
OXYGEN 16
OXYGEN IONS
RECRYSTALLIZATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SILICON OXIDES
STOICHIOMETRY
SUBSTRATES
SYNTHESIS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY