Ion beam synthesis of IrSi[sub 3] by implantation of 2 MeV Ir ions
- Oak Ridge National Lab., TN (United States)
- Forschungszentrum Juelich, Juelich (Germany)
Formation of a buried IrSi[sub 3] layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi[sub 3] layer is produced at 550C by implanting [ge] 3.4 [times] 10[sup 17] Ir/cm[sup 2] and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 [times] 10[sup 17] Ir/cm[sup 2], the thickness of the layer varied between 120 and 190 nm and many large IrSi[sub 3] precipitates were present above and below the film. Increasing the dose to 4.4 [times] 10[sup 17] Ir/cm[sup 2] improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi[sub 3] layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6901805
- Report Number(s):
- CONF-921101-32; ON: DE93005755
- Resource Relation:
- Conference: 16. Material Research Society international symposium on the scientific basis for nuclear waste management fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion beam synthesis of IrSi{sub 3} by 1-MeV Ir ion implantation into Si(111)
Characterization of silicon-on-insulator structures formed by ion implantation of oxygen
Related Subjects
IRIDIUM SILICIDES
SYNTHESIS
SILICON
ION IMPLANTATION
ANNEALING
ION BEAMS
ION CHANNELING
IRIDIUM IONS
MEV RANGE 01-10
RUTHERFORD SCATTERING
TEMPERATURE RANGE 0400-1000 K
BEAMS
CHANNELING
CHARGED PARTICLES
ELASTIC SCATTERING
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
IONS
IRIDIUM COMPOUNDS
MEV RANGE
REFRACTORY METAL COMPOUNDS
SCATTERING
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication