Origin of reverse annealing effect in hydrogen-implanted silicon
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Silicon Technology Solutions, Freescale Semiconductor Inc., Tempe, Arizona 85284 (United States)
In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. In this work, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induced platelets. Platelets are responsible for an increase in the height and width of the channeling damage peak following increased isochronal anneals.
- OSTI ID:
- 21347401
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 96; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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