Laser annealing of boron-implanted silicon

Journal Article · Wed Feb 01 04:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89959· OSTI ID:5255863

Young, R T; White, C W; Clark, G J; Narayan, J; Christie, W H; Murakami, M; King, P W; Kramer, S D

The properties of boron-implanted silicon annealed by high-power Q-switched ruby laser radiation are compared with results obtained by conventional thermal annealing. Laser annealing of the implanted layer results in significantly increased electrical activity, as compared to thermally annealed implanted silicon. This correlates well with transmission electron microscopy and ion-channeling measurements which show a dramatic removal of displacement damage as a result of laser annealing. A substantial redistribution of the implanted boron concentration profile occurs after laser annealing which cannot be explained by thermal diffusion in the solid.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• OSTI ID: 5255863
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ATOMIC IONS
BORON IONS
CARRIER MOBILITY
CHARGE CARRIERS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPTH DOSE DISTRIBUTIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IONS
LASER RADIATION
LASERS
MASS SPECTROSCOPY
MOBILITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RADIATIONS
RUBY LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS
SPATIAL DOSE DISTRIBUTIONS
SPECTROSCOPY