Redistribution of ion implanted boron induced by pulsed laser annealing

Conference · Thu Jan 01 04:00:00 EST 1976

OSTI ID:6670467

White, C W; Christie, W H; Eby, R E; Wang, J C; Young, R T; Clark, G J; Wood, R F

Secondary ion mass spectrometry has been used to study changes in the profile of /sup 11/B implanted into silicon and subsequently laser annealed using the Q-switched output of a ruby laser. Redistribution of the as-implanted profile is found to be pulse energy density and pulse number dependent. Calculation of the temperature profile shows that the surface region can be melted by the laser pulse, and theoretical profiles obtained by letting the as-implanted boron diffuse in liquid silicon are in good agreement with experimental results.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6670467
• Report Number(s): CONF-7605178-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
360106* -- Metals & Alloys-- Radiation Effects
ALLOYS
ANNEALING
BORON
BORON ADDITIONS
BORON ALLOYS
CHEMICAL ANALYSIS
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
HEAT TREATMENTS
ION IMPLANTATION
ION SCATTERING ANALYSIS
LASER RADIATION
NONDESTRUCTIVE ANALYSIS
PULSE TECHNIQUES
RADIATION DOSE DISTRIBUTIONS
RADIATIONS
SECONDARY EMISSION
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS