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U.S. Department of Energy
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Solar cells from ion-implanted, laser-annealed silicon

Conference ·
OSTI ID:7284156
As a part of the research program on solar energy conversion in the Solid State Division at the Oak Ridge National Laboratory, laser annealing of the lattice damage introduced by ion implantation of boron into silicon is being explored. The electrical properties of boron implanted silicon annealed by high power Q-switched ruby laser radiation have been compared with similar properties obtained on ion implanted thermally annealed samples. The defect structure of the implanted layer before and after both laser and thermal annealing has been studied by x ray, microscopy, transmission electron microscopy (TEM), ion channeling and secondary ion mass spectroscopy (SIMS). Solar cells have been fabricated using ion implantation-laser annealing, ion implantation-thermal annealing, and conventional thermal diffusion techniques for p-n junction formation. Results are presented and discussed.
Research Organization:
Oak Ridge National Lab., Tenn. (USA)
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
7284156
Report Number(s):
CONF-771051-1
Country of Publication:
United States
Language:
English