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Title: Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93342· OSTI ID:7048972

A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, approx.41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics.

Research Organization:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
7048972
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 41:10
Country of Publication:
United States
Language:
English