Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication
A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, approx.41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 7048972
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 41:10
- Country of Publication:
- United States
- Language:
- English
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Pulsed excimer-laser (308 nm) annealing of ion-implanted silicon and solar-cell fabrication
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Related Subjects
SILICON SOLAR CELLS
ANNEALING
ION IMPLANTATION
ARSENIC IONS
BORON IONS
ELECTRICAL PROPERTIES
FABRICATION
GAS LASERS
LASER-RADIATION HEATING
MATHEMATICAL MODELS
MELTING
PERFORMANCE
PHOTOVOLTAIC EFFECT
PULSES
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET RADIATION
XENON CHLORIDES
CHARGED PARTICLES
CHLORIDES
CHLORINE COMPOUNDS
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
EQUIPMENT
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
HEATING
IONS
LASERS
MICROSCOPY
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA HEATING
RADIATIONS
RARE GAS COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
XENON COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion