Pulsed excimer laser (308 nm) annealing of ion implanted silicon and solar cell fabrication

Journal Article · Sat Jan 01 04:00:00 EST 1983 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6692944

Lowndes, D H; Cleland, J W; Christie, W H; Eby, R E; Jellison, Jr, G E; Narayon, J; Westbrook, R D; Wood, R F; Nilson, J A; Dass, S C

A pulsed ultraviolet excimer laser (XeCl, 308 nm wavelength, 40 nsec FWHM pulse duration) has been successfully used for laser annealing of both boron- and arsenic-implanted silicon. TEM, SIMS, and sheet electrical measurements are used to characterize specimens. C-V and I-V measurements demonstrate that near-ideal p-n junctions are formed (diode perfection factor A = 1.2). Electrical activation of implanted ions by single laser pulses is essentially complete for energy densities E/sub l/ greater than or equal to 1.4 J/cm/sup 2/, far below the threshold for substantial surface damage --4.5 J/cm/sup 2/. Melting model calculations are in good agreement with observed thresholds for dopant redistribution and for epitaxial regrowth. Changes in annealing behavior resulting from multiple (1,2,5) laser pulses are also reported. Finally, the authors demonstrate the use of scanned overlapping excimer laser pulses for fabrication of large area (2 cm/sup 2/) solar cells with good performance characteristics. In contrast to pulsed ruby laser annealing, high open circuit voltages can be obtained without the use of substrate heating.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6692944
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 13; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ARSENIC
BORON
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
IRRADIATION
JUNCTIONS
LASER RADIATION
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PULSED IRRADIATION
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT