Effect of pulse duration on the annealing of ion implanted silicon with a XeCl excimer laser and solar cells

Journal Article · Sat Jan 01 00:00:00 EST 1983 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6596377

Young, R T; Narayan, J; Christie, W H; van der Leeden, G A; Rothe, D E; Sandstrom, R L

The advantage of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5-3.0 J/cm/sup 2/ are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% Am1 have been fabricated using glow discharge implantation and XeCl laser annealing.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6596377
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Vol. 13
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SILICON
ANNEALING
SILICON SOLAR CELLS
FABRICATION
ION IMPLANTATION
LASER RADIATION
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
XENON CHLORIDES
CHLORIDES
CHLORINE COMPOUNDS
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
IRRADIATION
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
RARE GAS COMPOUNDS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
XENON COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
140501 - Solar Energy Conversion- Photovoltaic Conversion