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Effect of pulse duration on the annealing of ion implanted silicon with a XeCl excimer laser and solar cells

Journal Article · · Mater. Res. Soc. Symp. Proc.; (United States)
OSTI ID:6596377
The advantage of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5-3.0 J/cm/sup 2/ are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% Am1 have been fabricated using glow discharge implantation and XeCl laser annealing.
Research Organization:
Oak Ridge National Lab., TN
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6596377
Journal Information:
Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 13; ISSN MRSPD
Country of Publication:
United States
Language:
English