Excimer laser annealing of ion-implanted silicon

Journal Article · Wed Feb 15 00:00:00 EST 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.333204· OSTI ID:5181780

Narayan, J; Holland, O W; White, C W; Young, R T

We have studied pulsed excimer laser (xenon chloride, wavelength 0.308 ..mu..m) annealing of boron, arsenic, and self-ion-implanted silicon specimens that contained dislocation loops and/or amorphous layers. Microstructural changes as a function of laser parameters were investigated by cross-section transmission electron microscopy and concomitant changes in dopant profiles were monitored by Rutherford backscattering spectroscopy. The depth of the annealed or melted regions was found to increase linearly with pulse energy density and inversely with pulse duration. While dopant redistribution can provide information on total melt-life time and depth of melting, a gross underestimate of depth of melting in amorphous layers may be obtained, particularly near the threshold, if the dopant redistribution is less than 100 A. We found that transmission electron microscopy techniques were more reliable for accurate determination of melt depths. A minimum thickness of defect-free annealed or melted region of 400 A was achieved in the case of boron-implanted specimens. A maximum depth of melting up to 1 ..mu.. in these specimens could be achieved by 2.5 J cm/sup -2/ (25 ns) pulses. The quality of excimer laser annealing in terms of residual point defects and spatial inhomogeneity was found to be better than that achieved by pulsed ruby laser annealing.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5181780
• Journal Information: J. Appl. Phys.; (United States), Vol. 55:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ANNEALING
ION IMPLANTATION
LASER-RADIATION HEATING
MICROSTRUCTURE
AMORPHOUS STATE
ARSENIC IONS
BACKSCATTERING
BORON IONS
CRYSTAL DEFECTS
DISLOCATIONS
DOPED MATERIALS
ELECTROMAGNETIC PULSES
GAS LASERS
KEV RANGE
LAYERS
MELTING
PHOTON COLLISIONS
RUBY LASERS
SILICON IONS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET RADIATION
CHARGED PARTICLES
COLLISIONS
CRYSTAL STRUCTURE
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
HEATING
IONS
LASERS
LINE DEFECTS
MATERIALS
MICROSCOPY
PHASE TRANSFORMATIONS
PLASMA HEATING
PULSES
RADIATIONS
SCATTERING
SEMIMETALS
SOLID STATE LASERS
360602* - Other Materials- Structure & Phase Studies
360601 - Other Materials- Preparation & Manufacture