Excimer laser annealing of ion-implanted silicon

Journal Article · Wed Feb 15 04:00:00 EST 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.333204· OSTI ID:5181780

Narayan, J; Holland, O W; White, C W; Young, R T

We have studied pulsed excimer laser (xenon chloride, wavelength 0.308 ..mu..m) annealing of boron, arsenic, and self-ion-implanted silicon specimens that contained dislocation loops and/or amorphous layers. Microstructural changes as a function of laser parameters were investigated by cross-section transmission electron microscopy and concomitant changes in dopant profiles were monitored by Rutherford backscattering spectroscopy. The depth of the annealed or melted regions was found to increase linearly with pulse energy density and inversely with pulse duration. While dopant redistribution can provide information on total melt-life time and depth of melting, a gross underestimate of depth of melting in amorphous layers may be obtained, particularly near the threshold, if the dopant redistribution is less than 100 A. We found that transmission electron microscopy techniques were more reliable for accurate determination of melt depths. A minimum thickness of defect-free annealed or melted region of 400 A was achieved in the case of boron-implanted specimens. A maximum depth of melting up to 1 ..mu.. in these specimens could be achieved by 2.5 J cm/sup -2/ (25 ns) pulses. The quality of excimer laser annealing in terms of residual point defects and spatial inhomogeneity was found to be better than that achieved by pulsed ruby laser annealing.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5181780
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
AMORPHOUS STATE
ANNEALING
ARSENIC IONS
BACKSCATTERING
BORON IONS
CHARGED PARTICLES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
DOPED MATERIALS
ELECTROMAGNETIC PULSES
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
GAS LASERS
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
KEV RANGE
LASER-RADIATION HEATING
LASERS
LAYERS
LINE DEFECTS
MATERIALS
MELTING
MICROSCOPY
MICROSTRUCTURE
PHASE TRANSFORMATIONS
PHOTON COLLISIONS
PLASMA HEATING
PULSES
RADIATIONS
RUBY LASERS
SCATTERING
SEMIMETALS
SILICON
SILICON IONS
SOLID STATE LASERS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET RADIATION