Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/GaSb quantum well interfaces.
- University of Wisconsin, Madison, WI
The thermal interdiffusion of AlSb/GaSb multiquantum wells was measured and the intrinsic diffusivities of Al and Ga determined over a temperature range of 823-948 K for 30-9000 s. The 77-K photoluminescence (PL) was used to monitor the extent of interdiffusion through the shifts in the superlattice luminescence peaks. The chemical diffusion coefficient was quantitatively determined by fitting the observed PL peak shifts to the solution of the Schroedinger equation, using a potential derived from the solution of the diffusion equation. The value of the interdiffusion coefficient ranged from 5.2 x 10{sup -4} to 0.06 nm{sup 2}/s over the conditions studied and was characterized by an activation energy of 3.0 {+-} 0.1 eV. The intrinsic diffusion coefficients for Al and Ga were also determined with higher values for Al than for Ga, described by activation energies of 2.8 {+-} 0.4 and 1.1 {+-} 0.1 eV, respectively.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 951731
- Report Number(s):
- SAND2005-0486J
- Journal Information:
- Proposed for publication in the Journal of Applied Physics., Journal Name: Proposed for publication in the Journal of Applied Physics.
- Country of Publication:
- United States
- Language:
- English
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