Self- and interdiffusion in Al{sub X}Ga{sub 1{minus}X}As/GaAs isotope heterostructures

Journal Article · Fri Jan 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123129· OSTI ID:292233

Bracht, H; Haller, E E ^[1]; Eberl, K; Cardona, M ^[2]

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1. Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720 (United States)
2. Max-Planck-Institut fuer Festkoerperforschung, 70569 Stuttgart (Germany)

We report self- and interdiffusion studies between 800 and 1160 {degree}C in buried Al{sup 71}GaAs/Al{sup 69}GaAs/{sup 71}GaAs and AlAs/{sup 71}GaAs isotope heterostructures. Ga diffusion at Al{sup 71}GaAs{endash}Al{sup 69}GaAs interfaces was found to decrease with increasing Al content. Al{endash}Ga interdiffusion at AlGaAs{endash}GaAs and AlAs{endash}GaAs interfaces reveals a concentration dependent interdiffusion coefficient. The temperature dependence of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs is described by a single activation enthalpy in the range of 3.6{plus_minus}0.1 eV, but with different pre-exponential factors. The experimentally observed higher Al diffusion in GaAs compared to Ga self-diffusion as well as the decreasing Ga diffusion with increasing Al content is explained. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 292233
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ENTHALPY
GALLIUM ARSENIDES
HETEROJUNCTIONS
ISOTOPE EFFECTS
ISOTOPES
MASS SPECTRA
SELF-DIFFUSION
TEMPERATURE DEPENDENCE