The effect of excess gallium vacancies in low-temperature GaAs/AlAs/GaAs:Si heterostructures
- Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720 (United States)
- MIT, Lincoln Laboratory, Lexington, Massachusetts 02173 (United States)
- Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
This article shows that the presence of low-temperature-grown GaAs (LT-GaAs) in LT-GaAs/AlAs/GaAs:Si heterostructures increases the Al/Ga interdiffusion at the heterostructure interfaces. The interdiffusion enhancement is attributed to the presence of Ga vacancies ({ital V}{sub Ga}) in the As-rich LT-GaAs, which diffuses from a supersaturation of {ital V}{sub Ga} frozen-in during sample growth. Chemical mapping, which distinguishes between the AlAs and GaAs lattices at an atomic scale, is used to measure the Al concentration gradient in adjacent GaAs:Si layers. A correlation is observed between the Al/Ga interdiffusion and the gate breakdown voltage in metal-insulator field-effect transistor structures containing LT-GaAs. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 288860
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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