AlAs/GaAs superlattice barrier unipolar diode structure
GaAs capacitor structures employing a thin undoped layer of (Al, Ga)As as a dielectric have been described and successfully used as gates in field effect transistors with transconductors exceeding 200 mS/mm at 77K. To improve the interface and bulk properties of the barrier, an AlAs/GaAs superlattice was substituted for the (Al, Ga)As. The I-V characteristics measured for the superlattice barrier structures had greatly reduced currents and a much larger degree of rectification than could be explained by conventional thermionic emission theory. A new theoretical model describing phonon-assisted emission provides a very good qualitative fit to the measured data. With the aid of this model we also find dramatic evidence for believing the conduction band offset in the AlAs/GaAs system is approximately 60% of the difference in the direct bandgaps.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Illinois Univ., Urbana (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6336579
- Report Number(s):
- SAND-84-1597C; CONF-841234-1; ON: DE85001904
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CAPACITORS
ELECTRICAL EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES
TRANSISTORS