A comparison of the amorphization induced in Al sub x Ga sub 1 minus x As and GaAs by heavy-ion irradiation

Journal Article · Fri Feb 01 04:00:00 EST 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347262· OSTI ID:6359268

Jencic, I; Bench, M W; Robertson, I M ^[1]; Kirk, M A ^[2]

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1. Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (US)
2. Materials Science Division, Argonne National Laboratory, Argonne, IL (USA)

The response of Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs samples to bombardment with heavy ions (50 keV Kr{sup +}, 50 keV and 1.5 MeV Xe{sup +}) was studied as a function of ion dose at temperatures of 30 and 300 K using transmission electron microscopy. Samples with {ital x}=0.2 and 0.85 were used. Under all irradiation temperature and ion combinations, the AlGaAs was more resistant to amorphization than GaAs. The resistance increased with increasing Al content and decreased with decreasing irradiation temperature. This difference in the response may be attributed to differences either in the mechanisms by which a region is rendered amorphous (i.e., by direct impact amorphization or by the buildup of point defects) or to differences in the inherent stability (recrystallization temperature and rate) of individual amorphous zones in AlGaAs and GaAs.

• DOE Contract Number: AC02-76ER01195
• OSTI ID: 6359268
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
COLLISIONS
ELECTRON MICROSCOPY
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION COLLISIONS
IONS
KEV RANGE
KEV RANGE 10-100
KRYPTON IONS
LAYERS
MEV RANGE
MEV RANGE 01-10
MICROSCOPY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TRANSMISSION ELECTRON MICROSCOPY
VERY LOW TEMPERATURE
XENON IONS