Enhanced T/sub 0/ values in GaSb/AlSb multiquantum well heterostructures
The material system GaSb/AlSb is discussed with respect to laser applications. Optical gain measurements reveal that in GaSb/AlSb multiquantum well heterostructures, energy-dependent resonant loss mechanisms such as intervalence band absorption and Auger recombination are significantly reduced as compared to bulk GaSb where these losses are resonant. The switch-off of the resonant loss processes is mirrored by the large ratio of the T/sub o/ values between the two-dimensional and the three-dimensional carrier system. Nonparabolicity effects present in the multiquantum well band structure are proposed to explain the switch-off of the loss resonance in GaSb/AlSb mulitquantum well heterostructures.
- Research Organization:
- SEL Research Center, D-7000 Stuttgart 40
- OSTI ID:
- 6361902
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ALUMINIUM COMPOUNDS
AMPLIFICATION
ANTIMONY COMPOUNDS
AUGER EFFECT
ENERGY DEPENDENCE
ENERGY LOSSES
GAIN
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
LASER MATERIALS
LASERS
LOSSES
MATERIALS
PERFORMANCE
RECOMBINATION
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THREE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL CALCULATIONS