Losses in GaInAs(P)/InP and GaA1Sb(As)/GaSb lasers-the influence of the split-off valence band

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071951· OSTI ID:5595063

Mozer, A; Hildebrand, O; Pilkuhn, M H; Romanek, K M; Schmid, W

GaInAs(P)/InP and GaA1Sb(As)/GaSb are interesting material systems for long wavelength optical fiber communication. However, lasers fabricated from these materials exhibit a substantially higher temperature dependence of the threshold current than GaAs/ GaA1As lasers (''T /SUB o/ -problem''). Intervalence band absorption and CHSH-Auger-recombination have been suggested as two possible causes for the strong temperature dependent losses in long wavelength lasers. Both mechanisms, if present, should lead to a population of the splitoff valence band. In GaInAsP/InP lasers, we have studied this population by directly observing the radiative high-energy recombination of electrons with holes in the split-off valence band. In the case of the band structure of GaA1Sb(As), the band gap energy E /SUB o/ is close or equal to the spin-orbit splitting energy ..delta.. /SUB o/ , which favors hole-Auger recombination and intervalence band absorption, as confirmed by our experimental results.

• Research Organization: Stuttgart University, Stuttgart
• OSTI ID: 5595063
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC ADDITIONS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LOSSES
NONMETALS
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
VALENCE
WAVELENGTHS