Optical gain and loss processes in GaInAs/InP MQW laser structures

Journal Article · Thu Jun 01 04:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29276· OSTI ID:5759895

Zielinski, E; Keppler, F; Hausser, S; Pilkuhn, M H; Saver, R; Tsang, W T

The experimental determination of unsaturated optical gain in GaInAs/InP multiple quantum well heterostructures (MQWH's) is reported. For the first time in this material, a pronounced step-like line shape of the optical gain spectra is observed, directly reflecting the two-dimensional (2D) nature of the carrier system. An excellent description of all experimental data such as line shape, peak gain values, the polarization dependence is obtained by applying a microscopic theory for the radiative recombination processes. From detailed line shape analyses, two-dimensional carrier densities up to 11 x 10/sup 12/ cm/sup -2/ and internal absorption coefficients up to 1000 cm/sup -1/ at room temperature are derived. A steep decrease of the differential quantum efficiency above 240 K reveals the importance of intervalence band absorption in QW lasers. Auger processes are quantitatively investigated in 2D lasers. Recombination coefficients are derived from the characteristic excitation dependence of the bandgap and E/sub g/ = /Delta//sub 0/ emission resulting from scattered carriers of the CHSH Auger process. Coupled carrier rate equations are applied for the conduction and the valence subbands, including the split-off band, and Auger coefficients of C = 0.9-1.4 x 10/sup -28/ cm/sup 6/ x s/sup -1/ are found. The threshold behavior of QW lasers is discussed using the experimentally determined absorption and recombination coefficients, and an optimization of the threshold current density with respect to the number of wells is given.

• Research Organization: SEL Research Centre, D-7000 Stuttgart 40 (DE); Physikalisches Institut., Univ. of Stuttgart, D-7000 Stuttgart 80 (DE); AT and T Bell Labs., Murray Hill, NJ (USA)
• OSTI ID: 5759895
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION SPECTRA
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CURRENT DENSITY
DATA
EFFICIENCY
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPTIMIZATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
QUANTUM ELECTRONICS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
TWO-DIMENSIONAL CALCULATIONS