Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs

Journal Article · Sun Jun 01 04:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1073035· OSTI ID:5495966

Sermage, B; Chemla, D S; Sivco, D; Cho, A Y

Carrier lifetime has been measured in GaInAs-AlInAs multiple quantum well structures and in thick GaInAs samples for local carrier densities between 2 x 10/sup 17/ and 5 x 10/sup 19/ cm/sup -3/. Carrier lifetime and Auger recombination are found to be very close (+. 20 percent) in the two structures. The Auger limited T/sub o/ values calculated for DH and MQW lasers are found to be, respectively, 93 and 170 K. Optimization of the quantum well laser as a function of the number of wells in the active region is discussed.

• Research Organization: CNET, Bagneux 92220
• OSTI ID: 5495966
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CARRIER LIFETIME
COMPARATIVE EVALUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LIFETIME
LOW TEMPERATURE
OPTIMIZATION
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS