Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy
Journal Article
·
· Current Applied Physics
GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.
- Research Organization:
- NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1329457
- Report Number(s):
- NREL/JA-5K00-67298
- Journal Information:
- Current Applied Physics, Journal Name: Current Applied Physics Journal Issue: 12 Vol. 16; ISSN 1567-1739
- Publisher:
- Korean Physical Society
- Country of Publication:
- United States
- Language:
- English
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