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Single Material Band Gap Engineering in GaAs Nanowires

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666516· OSTI ID:21612421
;  [1];  [2];  [3];  [3];  [4];  [1]
  1. Walter Schottky Institut, Technische Universitaet Muenchen, 85748, Garching (Germany)
  2. Naval Research Laboratory, Washington, DC 20375 (United States)
  3. Departament d'Electronica, Universitat de Barcelona, 08028 Barcelona, CAT (Spain)
  4. ICREA Research Professor at Institut de Ciencia de Materials de Barcelona, CSIC, 08193 Bellaterra, CAT (Spain)

The structural and optical properties of GaAs nanowire with mixed zinc-blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc-blende or wurtzite crystal phases. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV. The downward shift of the emission peaks can be understood by carrier confinement at the wurtzite/zinc-blende heterojunction, in quantum wells and in random short period superlattices existent in these nanowires, assuming the theoretical staggered band-offset between wurtzite and zinc-blende GaAs.

OSTI ID:
21612421
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English