Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

Journal Article · Thu Dec 22 23:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666437· OSTI ID:21612405

Kim, D C; Ahtapodov, L; Boe, A B; Moses, A F; Dheeraj, D L; Fimland, B O; Weman, H ^[1]; Choi, J W; Ji, H; Kim, G T ^[2]

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1. Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
2. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

• OSTI ID: 21612405
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ENERGY GAP
EPITAXY
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOSPHORS
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM WIRES
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
TEMPERATURE DEPENDENCE
ZINC COMPOUNDS
ZINC SULFIDES