Evidence for Auger and free-carrier losses in GaInAsP/InP lasers: Spectroscopy of a short wavelength emission

Journal Article · Mon Nov 15 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93371· OSTI ID:6808872

Mozer, A; Romanek, K M; Schmid, W; Pilkuhn, M H; Schlosser, E

We report the observation of two high-energy emission bands near 1.31 eV in Ga/sub 0.29/In/sub 0.71/As/sub 0.61/P/sub 0.39/ /InP laser diodes. One emission band is associated with recombination in the InP due to carrier leakage from the active layer. A second, more important emission band with an energy close to E/sub 0/+..delta../sub 0/ is associated with recombination of holes in the split-off valence band and electrons in the conduction band. The split-off valence band is significantly populated by Auger recombination and intervalence band absorption. From the dependence of the integrated E/sub 0/+..delta../sub 0/ luminescence intensity on injection current (below threshold) we determine an Auger coefficient for holes of Capprox. =5 x 10/sup -29/ cm/sup 6/ s/sup -1/ at T = 300 K.

• Research Organization: Universitaet Stuttgart, Physikalisches Institut 4, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany
• OSTI ID: 6808872
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CHARGE CARRIERS
DATA
ELECTRONS
ELEMENTARY PARTICLES
ENERGY LEVELS
EXPERIMENTAL DATA
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LAYERS
LEPTONS
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTROSCOPY
VALENCE
WAVELENGTHS