Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Academy of Sciences of Czech Republic, Institute of Physics (Czech Republic)
Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface are studied. The heterostructures were grown by metalorganic vapor phase epitaxy. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. Dependences of the spectra and intensities for positive and negative luminescence on the pumping current and on the temperature are studied in the range of 77-380 K. It is established that, at a temperature higher than 75 deg. C, intensity of negative luminescence surpasses that of positive luminescence by 60%. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 {mu}m.
- OSTI ID:
- 21562367
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
BOSONS
CRYSTAL GROWTH METHODS
ELECTROLUMINESCENCE
ELEMENTARY PARTICLES
EMISSION
ENERGY RANGE
EPITAXY
EV RANGE
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LUMINESCENCE
MASSLESS PARTICLES
NANOSTRUCTURES
PHOTODIODES
PHOTON EMISSION
PHOTONS
PNICTIDES
QUANTUM WELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA
VAPOR PHASE EPITAXY