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Title: Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb quantum wells

Journal Article · · Semiconductors
;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

The optical characteristics of heterostructures with deep quantum wells are studied using the AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb structure within the framework of the four-band Kane model with regard to the nonparabolicity of the carrier energy spectrum. It is demonstrated that consideration of the nonparabolicity increases the number of size-quantization levels in the conduction band. At a quantum-well width of 100 Å, the investigated heterostructure contains three size-quantization levels within the parabolic model and six levels within the Kane model. This is due to the fact that the effective mass of high-energy electrons is found to be larger than the mass of electrons at the bottom of the conduction band by a factor of four. It is shown that account for the nonparabolicity only slightly affects the overlap integral for the s and p states, but significantly increases the density of states in the conduction band, which causes considerable growth in the radiation-absorption coefficient.

OSTI ID:
22469965
Journal Information:
Semiconductors, Vol. 49, Issue 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English