Exchange enhancement of the g factor in InAs/AlSb heterostructures
The evolution of the Shubnikov-de Haas oscillations in InAs/AlSb heterostructures with twodimensional electron gas in InAs quantum wells 12-18 nm wide with considerable variation in the electron concentration (3-8) x 10{sup 11} cm{sup -2} due to the effect of negative persistent photoconductivity is studied. The values of the effective Lande factor for electrons g* = -(15-35) are determined. It is shown that the value of the g* factor increases as the quantum well width increases.
- OSTI ID:
- 21255644
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 42; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
Journal Article
·
Sat May 15 00:00:00 EDT 2010
· Semiconductors
·
OSTI ID:21562300
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures
Journal Article
·
Sat Feb 14 23:00:00 EST 2015
· Semiconductors
·
OSTI ID:22470075
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
Journal Article
·
Sun Oct 15 00:00:00 EDT 2017
· Semiconductors
·
OSTI ID:22756347