Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

Journal Article · Sat May 15 04:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S106378261005012X· OSTI ID:21562300

Gavrilenko, V I; Ikonnikov, A V; Krishtopenko, S S; Lastovkin, A A; Marem'yanin, K V; Sadofyev, Yu G

Effects of persistent photoconductivity in InAs/AlSb heterostructures with the cap GaSb layer and two-dimensional electron gas in the InAs double quantum wells at T = 4.2 K are studied. From Fourier analysis of the Shubnikov-de Haas oscillations, electron concentrations in each quantum well are determined at various wavelengths of illumination and pronounced asymmetry of the structure caused by the built-in electric field is demonstrated explicitly. The self-consistent calculations of the energy profile of the double quantum well are performed and the concentrations of ionized donors on both sides of the well are determined, which provided concretization of the previously suggested mechanism of bipolar persistent photoconductivity in such structures.

• OSTI ID: 21562300
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRON GAS
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
FOURIER ANALYSIS
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
LEPTONS
NANOSTRUCTURES
OSCILLATIONS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM WELLS
TWO-DIMENSIONAL CALCULATIONS
WAVELENGTHS