Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618120230· OSTI ID:22756135

Gaponova, D. M.; Marem’yanin, K. V.; Rumyantsev, V. V.; Gavrilenko, V. I. ^[1]; Mikhailov, N. N.; Dvoretsky, S. A. ^[2]

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1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)

The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.

• OSTI ID: 22756135
• Journal Information: Semiconductors, Vol. 52, Issue 12; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
MERCURY TELLURIDES
PHOTOCONDUCTIVITY
QUANTUM WELLS
WAVELENGTHS