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Title: The growth of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW on n-Silicon (1 0 0) with Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers

Abstract

Highlights: • GaSb/Al{sub 0.33}GaSb MQW layer was grown on Si (1 0 0) by MBE. • The effect of miscut angle of Si substrate was studied. • A lot of twins were removed by Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers. • Good quality of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW layers were proved by PL spectra. • Optimum growth temperature of the AlSb buffer layer was studied. - Abstract: GaSb/Al{sub 0.33}Ga{sub 0.67}Sb multi-quantum well (MQW) film on n-Si (1 0 0) substrates is grown by molecular beam epitaxy. The effects of a miscut angle of the Si substrate (0°, 5°, and 7°) on the properties of an AlSb layer were also studied. The suppression of the anti-phase domains (APD) was observed at a miscut angle of 5° on Si (1 0 0). It was found that the growth temperature in the range of 510–670 °C affects the quality of AlSb layers on Si. Low root-mean-square surface (RMS) roughness values of 3–5 nm were measured by atomic force microscopy at growth temperatures ranging from 550 °C to 630 °C. In addition, Al{sub 0.66}Ga{sub 0.34}Sb/AlSb short period superlattice (SPS) layers were used to overcome problems associated with a large lattice mismatch. The RMS values ofmore » samples with a SPS were partially measured at approximately ∼1 nm, showing a larger APD surface area than samples without a SPS layer. Bright-field cross-sectional transmission electron microscopy images of the GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW, the AlSb buffer layer and the Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers show that numerous twins from the AlSb/Si interface were removed by the AlSb buffer layer and the Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS. The GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW PL spectra were obtained at 300 K and 10 K with a fixed excitation power of 103 mW. Emission peaks appeared at 1758 nm and 1620 nm, respectively.« less

Authors:
 [1];  [2];  [3]; ; ; ;  [2]
  1. Nano-Electronic Engineering, University of Science Technology, Daejeon 305-350 (Korea, Republic of)
  2. Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  3. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420554
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 57; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; EMISSION SPECTRA; EXCITATION; FILMS; GALLIUM ANTIMONIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; ROUGHNESS; SILICON; SUBSTRATES; SUPERLATTICES; SURFACE AREA; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Yoen, Kyu Hyoek, Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Song, Jin Dong, E-mail: jdsong@kist.re.kr, Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Lee, Eun Hye, Jang, Hye Joung, Bae, Min Han, Kim, Jun Young, Han, Il Ki, and Choi, Won Jun. The growth of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW on n-Silicon (1 0 0) with Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers. United States: N. p., 2014. Web. doi:10.1016/J.MATERRESBULL.2014.05.040.
Yoen, Kyu Hyoek, Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Song, Jin Dong, E-mail: jdsong@kist.re.kr, Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Lee, Eun Hye, Jang, Hye Joung, Bae, Min Han, Kim, Jun Young, Han, Il Ki, & Choi, Won Jun. The growth of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW on n-Silicon (1 0 0) with Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers. United States. doi:10.1016/J.MATERRESBULL.2014.05.040.
Yoen, Kyu Hyoek, Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Song, Jin Dong, E-mail: jdsong@kist.re.kr, Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Lee, Eun Hye, Jang, Hye Joung, Bae, Min Han, Kim, Jun Young, Han, Il Ki, and Choi, Won Jun. Mon . "The growth of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW on n-Silicon (1 0 0) with Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers". United States. doi:10.1016/J.MATERRESBULL.2014.05.040.
@article{osti_22420554,
title = {The growth of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW on n-Silicon (1 0 0) with Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers},
author = {Yoen, Kyu Hyoek and Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 and Song, Jin Dong, E-mail: jdsong@kist.re.kr and Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 and Lee, Eun Hye and Jang, Hye Joung and Bae, Min Han and Kim, Jun Young and Han, Il Ki and Choi, Won Jun},
abstractNote = {Highlights: • GaSb/Al{sub 0.33}GaSb MQW layer was grown on Si (1 0 0) by MBE. • The effect of miscut angle of Si substrate was studied. • A lot of twins were removed by Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers. • Good quality of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW layers were proved by PL spectra. • Optimum growth temperature of the AlSb buffer layer was studied. - Abstract: GaSb/Al{sub 0.33}Ga{sub 0.67}Sb multi-quantum well (MQW) film on n-Si (1 0 0) substrates is grown by molecular beam epitaxy. The effects of a miscut angle of the Si substrate (0°, 5°, and 7°) on the properties of an AlSb layer were also studied. The suppression of the anti-phase domains (APD) was observed at a miscut angle of 5° on Si (1 0 0). It was found that the growth temperature in the range of 510–670 °C affects the quality of AlSb layers on Si. Low root-mean-square surface (RMS) roughness values of 3–5 nm were measured by atomic force microscopy at growth temperatures ranging from 550 °C to 630 °C. In addition, Al{sub 0.66}Ga{sub 0.34}Sb/AlSb short period superlattice (SPS) layers were used to overcome problems associated with a large lattice mismatch. The RMS values of samples with a SPS were partially measured at approximately ∼1 nm, showing a larger APD surface area than samples without a SPS layer. Bright-field cross-sectional transmission electron microscopy images of the GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW, the AlSb buffer layer and the Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers show that numerous twins from the AlSb/Si interface were removed by the AlSb buffer layer and the Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS. The GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW PL spectra were obtained at 300 K and 10 K with a fixed excitation power of 103 mW. Emission peaks appeared at 1758 nm and 1620 nm, respectively.},
doi = {10.1016/J.MATERRESBULL.2014.05.040},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 57,
place = {United States},
year = {2014},
month = {9}
}