Optically pumped laser oscillation in the 1. 6--1. 8 m region from Al/sub 0. 4/Ga/sub 0. 6/Sb/GaSb/Al/sub 0. 4/Ga/sub 0. 6/Sb double heterostructures grown by molecular beam heteroepitaxy on Si
Double heterostructures consisting of GaSb active layers with Al/sub 0.4/Ga/sub 0.6/Sb cladding layers were grown by molecular beam heteroepitaxy on Si substrates. The intrinsic approx.12% lattice mismatch between the GaSb and the Si at the growth temperature is largely taken up by a GaSb/AlSb superlattice. The larger thermal contraction of the GaSb layer relative to that of Si causes the GaSb layer to be under severe dilatory strain relative to the Si substrate at room temperature. Optically pumped laser emission ranging from 1.62 m at 80 K to 1.82 m at 350 K was observed. The threshold varied somewhat nonexponentially with temperature, with a change in slope at approx.250 K. The exponential threshold-temperature dependences at 80 and 300 K are T0 = 158 and 100 K, respectively, and are higher than previously reported for GaSb lasers. At 300 K the threshold corresponds to an effective current of 12 kA/cmS.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6342953
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ANTIMONY COMPOUNDS
COATINGS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
EPITAXY
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASERS
LATTICE PARAMETERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
OPERATION
OPTICAL PUMPING
PERFORMANCE
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD ENERGY
VAPOR DEPOSITED COATINGS