Optically pumped laser oscillation in the 1. 6-1. 8. mu. m region from strained layer Al/sub 0. 4/Ga/sub 0. 6/Sb/GaSb/Al/sub 0. 4/Ga/sub 0. 6/Sb/double heterostructures grown by molecular beam hetero-epitaxy on Si substrates

Journal Article · Mon Sep 01 00:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1073180· OSTI ID:5185557

Van Der Ziel, J P; Malik, R J; Walker, J F; Mikulyak, R M

Double heterostructure lasers consisting of GaSb active layers with Al/sub 0.4/Ga/sub 0.6/Sb cladding layers were grown by molecular beam hetero-epitaxy on Si substrates. The intrinsic approx. =12 percent lattice mismatch between the GaSb and the Si at the growth temperature is largely taken up by a GaSb/AlSb superlattice. The GaSb layer is under severe dilatory strain at room temperature due to the larger thermal contraction of the GaSb layer relative to that of Si from the growth temperature and resulting in shrinkage of the GaSb bandgap. The authors observed optically pumped laser emission ranging from 1.63 ..mu..m at 85 K to 1.83 ..mu..m at 350 K. The exponential dependence of the threshold pump power and relative quantum efficiency exhibits a change in slope at approx. = 250 K. The exponential threshold-temperature dependence at 80 and 300 K are T/sub 0/ = 158 and 100 K, respectively, and are higher than previously reported for GaSb lasers. At 300 K the threshold corresponds to an equivalent current density of 12 kA/cm/sup 2/.

• Research Organization: AT and T Bell Labs., Murray Hill, NJ 07974
• OSTI ID: 5185557
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-22:9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM COMPOUNDS
OPTICAL PUMPING
ANTIMONY COMPOUNDS
GALLIUM COMPOUNDS
SEMICONDUCTOR LASERS
LASER MATERIALS
CONTRACTION
CURRENT DENSITY
GRADED BAND GAPS
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
OSCILLATIONS
QUANTUM EFFICIENCY
SHRINKAGE
SILICON
STRAINS
SUBSTRATES
WAVELENGTHS
EFFICIENCY
ELEMENTS
EPITAXY
LASERS
MATERIALS
PUMPING
SEMICONDUCTOR DEVICES
SEMIMETALS
420300* - Engineering- Lasers- (-1989)